2SJ681

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII)

RelayDrive,DC−DCConverterandMotorDriveApplications ●4-Vgatedrive ●Lowdrain-sourceON-resistance:RDS(ON)=0.12Ω(typ.)(VGS=−10V) ●Highforwardtransferadmittance:|Yfs|=5.0S(typ.) ●Lowleakagecurrent:IDSS=−100μA(max)(VDS=−60V) ●Enhancementmode:Vth=−0.8

2SJ681

P-Channel 4 0 V (D-S) MOSFET

FEATURES •ComplianttoRoHSDirective2002/95/EC

2SJ681

Power MOSFET (P-ch single); Drain current ID -5 A \nPower Dissipation PD 20 W \nDrain-Source voltage VDSS -60 V \n;

Polarity：P-ch\nGeneration：U-MOSⅢ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本\n

2SJ681

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII)

2SJ681Q

Relay Drive, DC?묭C Converter and Motor Drive Applications

RelayDrive,DC−DCConverterandMotorDriveApplications ●4-Vgatedrive ●Lowdrain-sourceON-resistance:RDS(ON)=0.12Ω(typ.)(VGS=−10V) ●Highforwardtransferadmittance:|Yfs|=5.0S(typ.) ●Lowleakagecurrent:IDSS=−100μA(max)(VDS=−60V) ●Enhancementmode:Vth=−0.8

2SJ681_09

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII)

2SJ6812

High Voltage Color Display Horizontal