MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ649 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance: RDS(on)1= 48 mΩMAX. (VGS= –10 V, ID= –10 A) RDS(on)2= 75 mΩMAX. (VGS= –4.0 V, ID= –10 A) • Low inpu

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SWITCHING P-CHANNEL POWER MOS FET

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Pch Single Power Mosfet -60V -20A 48Mohm Mp-45F/To-220

The 2SJ649 is a Pch Single Power Mosfet -60V -20A 48Mohm Mp-45F/To-220. • Low on-state resistance:RDS(on)1 = 48 mΩ MAX. (VGS = –10 V, ID = –10 A)RDS(on)2 = 75 mΩ MAX. (VGS = –4.0 V, ID = –10 A)\n• Low input capacitance:Ciss = 1900 pF TYP. (VDS = –10 V, VGS = 0 V)\n• Built-in gate protection diode;

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SWITCHING P-CHANNEL POWER MOS FET

文件：210.83 Kbytes 页数：10 Pages

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