首页 >2SJ687>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

2SJ687

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The2SJ687isP-channelMOSFETdeviceandaexcellentswitchthatcanbedrivenbyalowpower-supplyvoltage. FEATURES •Lowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=−4.5V,ID=−10A) RDS(on)2=9.0mΩMAX.(VGS=−3.0V,ID=−10A) RDS(on)3=20mΩMAX.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

2SJ687

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ687isP-channelMOSFETdeviceandaexcellentswitchthatcanbedrivenbyalowpower-supplyvoltage. FEATURES •Lowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=−4.5V,ID=−10A) RDS(on)2=9.0mΩMAX.(VGS=−3.0V,ID=−10

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

2SJ687-ZK-E1-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The2SJ687isP-channelMOSFETdeviceandaexcellentswitchthatcanbedrivenbyalowpower-supplyvoltage. FEATURES •Lowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=−4.5V,ID=−10A) RDS(on)2=9.0mΩMAX.(VGS=−3.0V,ID=−10A) RDS(on)3=20mΩMAX.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

2SJ687-ZK-E1-AY

P-Channel 30 V (D-S) MOSFET

FEATURES •ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

2SJ687-ZK-E1-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ687isP-channelMOSFETdeviceandaexcellentswitchthatcanbedrivenbyalowpower-supplyvoltage. FEATURES •Lowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=−4.5V,ID=−10A) RDS(on)2=9.0mΩMAX.(VGS=−3.0V,ID=−10

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

2SJ687-ZK-E2-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The2SJ687isP-channelMOSFETdeviceandaexcellentswitchthatcanbedrivenbyalowpower-supplyvoltage. FEATURES •Lowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=−4.5V,ID=−10A) RDS(on)2=9.0mΩMAX.(VGS=−3.0V,ID=−10A) RDS(on)3=20mΩMAX.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

2SJ687-ZK-E2-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ687isP-channelMOSFETdeviceandaexcellentswitchthatcanbedrivenbyalowpower-supplyvoltage. FEATURES •Lowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=−4.5V,ID=−10A) RDS(on)2=9.0mΩMAX.(VGS=−3.0V,ID=−10

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

2SJ687_15

SWITCHING P-CHANNEL POWER MOS FET

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

详细参数

  • 型号:

    2SJ687

  • 制造商:

    NEC

  • 制造商全称:

    NEC

  • 功能描述:

    MOS FIELD EFFECT TRANSISTOR

供应商型号品牌批号封装库存备注价格
23+
N/A
65210
正品授权货源可靠
询价
VB
2019
SOT-252
55000
绝对原装正品假一罚十!
询价
N
23+
SOT-252
76000
全新原装真实库存含13点增值税票!
询价
N
23+
SOT-252
10000
公司只做原装正品
询价
NEC
23+
TO-252
50000
全新原装正品现货,支持订货
询价
NEC
22+
TO-252
3000
原装现货假一赔十
询价
NEC
2022
TO-252
80000
原装现货,OEM渠道,欢迎咨询
询价
N
22+
SOT-252
6000
十年配单,只做原装
询价
NEC
SOT-252
608900
原包原标签100%进口原装常备现货!
询价
RENESAS/瑞萨
2021+
TO252
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
更多2SJ687供应商 更新时间2024-5-3 11:36:00