MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage. FEATURES • Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = −3.0 V, ID = −10 A) RDS(on)3 = 20 mΩ MAX.

文件：167.41 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage. FEATURES • Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = −3.0 V, ID = −10

文件：276.82 Kbytes 页数：10 Pages

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MOS FIELD EFFECT TRANSISTOR

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P-Channel 30 V (D-S) MOSFET

FEATURES • Compliant to RoHS Directive 2002/95/EC

文件：1.77873 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage. FEATURES • Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = −3.0 V, ID = −10

文件：276.82 Kbytes 页数：10 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage. FEATURES • Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = −3.0 V, ID = −10 A) RDS(on)3 = 20 mΩ MAX.

文件：167.41 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage. FEATURES • Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = −3.0 V, ID = −10

文件：276.82 Kbytes 页数：10 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage. FEATURES • Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = −3.0 V, ID = −10 A) RDS(on)3 = 20 mΩ MAX.

文件：167.41 Kbytes 页数：8 Pages

NEC

瑞萨

SWITCHING P-CHANNEL POWER MOS FET

文件：277.43 Kbytes 页数：10 Pages

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Pch Single Power Mosfet -20V -20A 7.0Mohm Mp-3Zk/To-252

The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage. • Low on-state resistanceRDS(on)1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A)RDS(on)2 = 9.0 mΩ MAX. (VGS = −3.0 V, ID = −10 A)RDS(on)3 = 20 mΩ MAX. (VGS = −2.5 V, ID = −10 A)\n• 2.5 V drive available\n• Avalanche capability ratings;

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