2SJ687

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The2SJ687isP-channelMOSFETdeviceandaexcellentswitchthatcanbedrivenbyalowpower-supplyvoltage. FEATURES •Lowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=−4.5V,ID=−10A) RDS(on)2=9.0mΩMAX.(VGS=−3.0V,ID=−10A) RDS(on)3=20mΩMAX.

2SJ687

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ687isP-channelMOSFETdeviceandaexcellentswitchthatcanbedrivenbyalowpower-supplyvoltage. FEATURES •Lowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=−4.5V,ID=−10A) RDS(on)2=9.0mΩMAX.(VGS=−3.0V,ID=−10

2SJ687

MOS FIELD EFFECT TRANSISTOR;

2SJ687-ZK

Pch Single Power Mosfet -20V -20A 7.0Mohm Mp-3Zk/To-252; • Low on-state resistanceRDS(on)1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A)RDS(on)2 = 9.0 mΩ MAX. (VGS = −3.0 V, ID = −10 A)RDS(on)3 = 20 mΩ MAX. (VGS = −2.5 V, ID = −10 A)\n• 2.5 V drive available\n• Avalanche capability ratings\n;

The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage.

2SJ687-ZK-E1-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The2SJ687isP-channelMOSFETdeviceandaexcellentswitchthatcanbedrivenbyalowpower-supplyvoltage. FEATURES •Lowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=−4.5V,ID=−10A) RDS(on)2=9.0mΩMAX.(VGS=−3.0V,ID=−10A) RDS(on)3=20mΩMAX.

2SJ687-ZK-E1-AY

P-Channel 30 V (D-S) MOSFET

FEATURES •ComplianttoRoHSDirective2002/95/EC

2SJ687-ZK-E1-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ687isP-channelMOSFETdeviceandaexcellentswitchthatcanbedrivenbyalowpower-supplyvoltage. FEATURES •Lowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=−4.5V,ID=−10A) RDS(on)2=9.0mΩMAX.(VGS=−3.0V,ID=−10

2SJ687-ZK-E2-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The2SJ687isP-channelMOSFETdeviceandaexcellentswitchthatcanbedrivenbyalowpower-supplyvoltage. FEATURES •Lowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=−4.5V,ID=−10A) RDS(on)2=9.0mΩMAX.(VGS=−3.0V,ID=−10A) RDS(on)3=20mΩMAX.

2SJ687-ZK-E2-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ687isP-channelMOSFETdeviceandaexcellentswitchthatcanbedrivenbyalowpower-supplyvoltage. FEATURES •Lowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=−4.5V,ID=−10A) RDS(on)2=9.0mΩMAX.(VGS=−3.0V,ID=−10

2SJ687_15

SWITCHING P-CHANNEL POWER MOS FET