MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage. FEATURES • Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = −3.0 V, ID = −10 A) RDS(on)3 = 20 mΩ MAX.

文件：167.41 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage. FEATURES • Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = −3.0 V, ID = −10

文件：276.82 Kbytes 页数：10 Pages

RENESAS

瑞萨

P-Channel 30 V (D-S) MOSFET

FEATURES • Compliant to RoHS Directive 2002/95/EC

文件：1.77873 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

东芝台产
T092

东芝台产

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HITACHI
TO-220

HitachiHitachi Semiconductor

日立日立公司

上传：深圳市宏捷佳电子科技有限公司