Silicon P Channel MOS FET

Description High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216 Features • Suitable for direct mounting • High forward transfer admittance • Excellent frequency response • Enhancement-mode

文件：64.87 Kbytes 页数：6 Pages

RENESAS

瑞萨

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -0.5A@ TC=25℃ ·Drain Source Voltage -VDSS= -200V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.0Ω(Max)@VGS = -10 V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：370.23 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon P Channel MOS FET

Description High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216 Features • Suitable for direct mounting • High forward transfer admittance • Excellent frequency response • Enhancement-mode

文件：64.87 Kbytes 页数：6 Pages

RENESAS

瑞萨

Silicon P-Channel MOS FET

Features • Suitable for direct mounting • High forward transfer admittance • Excellent frequency response • Enhancement-mode Application High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216

文件：33.89 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

日立日立公司