MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SJ625 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 1.8 V dri

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NEC

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Old Company Name in Catalogs and Other Documents

DESCRIPTION The 2SJ625 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 1.8 V drive

文件：201.48 Kbytes 页数：10 Pages

RENESAS

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P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

文件：201.48 Kbytes 页数：10 Pages

RENESAS

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TO-220-3

ON

上传：深圳市芯峰微电子科技有限公司

TO-22F

RENESAS

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上传：深圳市华康联电子科技有限公司（销售一部）