N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

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NEC

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Field Effect Transistor

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

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NEC

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MOS FIELD EFFECT TRANSISTOR

FEATURES - Directly driven by ICs havinga 5 V power source - Has low on-state resistance. Ros(on) = 1.00 2 MAX. @Vgs =40V, Ip = 05 A Ros(on) = 0.65 2 MAX. @Vgs = 10V, Ip = 05 A - Not necessary to_consider driving current because of its high input impedance. - Possible 0 reduce the number of

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RENESAS

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MOS Field Effect Transistor

Features • Directly driver by Ics having a 5V power source. • Has low on-satate resistance RDS(on)=1.00 MAX.@VGS=4.0V,ID=0.5A RDS(on)=0.65 MAX.@VGS=10V,ID=0.5A • Not necessary to consider driving current because of its high input impedance. • Possible to reduce the number o

文件：44.76 Kbytes 页数：1 Pages

KEXIN

科信电子

N-Channel 0-V (D-S) MOSFET

文件：1.76414 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

Power MOSFETs-Power MOSFETs for Automotive

Renesas

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N-Channel MOSFET

文件：1.38242 Mbytes 页数：4 Pages

KEXIN

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