N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

DESCRIPTION The 2SK1399 is an N-channel vertical type MOS FET which can be driven by 2.5-V power supply. The 2SK1399 is driven by low voltage and does not require consideration of driving current, it is suitable for appliances including VCR cameras and headphone stereos which need power saving.

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NEC

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丝印：G12；Package：SC-59；MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SK1399 is an N-channel vertical type MOS FET can be driven by 2.5 V power supply. The 2SK1399 is driven by low voltage and does not require consideration of driving current, it is suitable for appliances includ

文件：246.97 Kbytes 页数：7 Pages

RENESAS

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MOS Field Effect Transistor

Features ● Can be driven by a 3.0-V power source ● Not necessary to consider driving current because of it is high input impedance ● Possible to reduce the number of parts by omitting the bias resistor ● Complments the 2SJ185

文件：45.17 Kbytes 页数：1 Pages

KEXIN

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Power MOSFETs-Power MOSFETs for Automotive

Renesas

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N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • 1200V ESD Protection • Compliant to RoHS Directive 2002/95/EC BENEFITS • Low

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VBSEMI

微碧半导体

N-Channel MOSFET

文件：816.27 Kbytes 页数：3 Pages

KEXIN

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N-Channel MOSFET

文件：845.69 Kbytes 页数：3 Pages

KEXIN

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N-channel MOS FET

NEC

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