2SK1399

Marking：G12；Package：SC-59；MOS FIELD EFFECT TRANSISTOR

N-CHANNELMOSFIELDEFFECTTRANSISTOR FORHIGHSPEEDSWITCHING DESCRIPTION The2SK1399isanN-channelverticaltypeMOSFETcanbe drivenby2.5Vpowersupply. The2SK1399isdrivenbylowvoltageanddoesnotrequire considerationofdrivingcurrent,itissuitableforappliancesinclud

FMG12

Marking：G12；Package：SMT6；Emitter common(dual digital transistors)

Features 1)IncludetwoDTC323TtransistorsinasingleSMTpackage. 2)LowVCE(sat).Idealformutingcircuit. 3)CanbeusedwithIC=600mA

PESDSOT12C

Marking：G12；Package：SOT-23；Plastic-Encapsulate Diodes

FEATURES Bi-directionalESDprotectionoftwolines Lowreversestand−offvoltage:12V Lowreverseclampingvoltage Lowleakagecurrent Fastresponsetime JESD22-A114-BESDRatingofclass3Bperhumanbodymodel IEC61000-4-2Level4ESDprotection DESCRIPTION Lowcapacit

BZG03C12

Marking：G12；Package：DO-214AC；Zener Diodes

MIC2006-1.2YML-TR

Marking：G12；Package：DFN；Fixed and Adjustable Current Limiting Power Distribution Switches

G120N02D32

Marking：G120N02；Package：DFN3X3-8LDual；DUAL N-Channel Enhancement Mode Power MOSFET

Description TheG120N02D32usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

G120N03D3

Marking：G120N03；Package：DFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Description TheG120N03D3usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

G120N03D32

Marking：G120N03；Package：DFN3X3-8LDual；DUAL N-Channel Enhancement Mode Power MOSFET

Description TheG120N03D32usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

G120P03S2

Marking：G120P03；Package：SOP-8Dual；DUAL P-Channel Enhancement Mode Power MOSFET

Description TheG120P03S2usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

G120P06M

Marking：G120P06；Package：TO-263；P-Channel Enhancement Mode Power MOSFET

Description TheG120P06Musesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters