丝印：G12P10；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G12P10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：623.74 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G12P10；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G12P10KE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：635.82 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G12P10；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description The G12P10TE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：873.94 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G12P10；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G12P10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：623.74 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G12P10；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G12P10KE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：635.82 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G12P10；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description The G12P10TE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：873.94 Kbytes 页数：6 Pages

GOFORD

谷峰半导体