丝印：G16；Package：SC-59；MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOSFET FOR SWITCHING DESCRIPTION The 2SK1590, N-channel vertical type MOSFET, is a switching device which can be driven directly by the output of ICs having a 5 V power source. The MOSFET has excellent switching characteristics and is suitable for use as a high-speed switching d

文件：455.06 Kbytes 页数：7 Pages

RENESAS

瑞萨

丝印：G16；Package：DSBGA；LM48821 Direct Coupled, Ultra Low Noise, 52mW Differential Input Stereo Headphone Amplifier with I2C Volume Control

1FEATURES 2• Ground Referenced Outputs • Differential Inputs • I2C Volume and Mode Controls • Available in Space-Saving DSBGA Package • Ultra Low Current Shutdown Mode • Advanced Output Transient Suppression Circuitry Eliminates Noises During Turn-On and Turn-Off Transitions • 2.0V to 4.0

文件：628.68 Kbytes 页数：23 Pages

TI

德州仪器

丝印：G16；Package：DSBGA；LM48821 Direct Coupled, Ultra Low Noise, 52mW Differential Input Stereo Headphone Amplifier with I2C Volume Control

1FEATURES 2• Ground Referenced Outputs • Differential Inputs • I2C Volume and Mode Controls • Available in Space-Saving DSBGA Package • Ultra Low Current Shutdown Mode • Advanced Output Transient Suppression Circuitry Eliminates Noises During Turn-On and Turn-Off Transitions • 2.0V to 4.0

文件：628.68 Kbytes 页数：23 Pages

TI

德州仪器

丝印：G16；Package：DO-214AC；Zener Diodes

文件：1.54174 Mbytes 页数：3 Pages

LUGUANG

鲁光电子

丝印：G16N03；Package：SOP-8；N-Channel Enhancement Mode Power MOSFET

Description The G16N03S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.0664 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G16P03；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET

Description The G16P03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：625.64 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G16P03；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET

Description The G16P03D3A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：961.98 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G16P03；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

Description The G16P03S uses advanced trench technology to provide excellent R DS(ON) , low gate charge. It can be used in a wide variety of applications. Application  Power switch DC/DC converters

文件：1.06438 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G160N60；Package：TO-264；Ultrafast IGBT

General Description Fairchilds UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Features • High speed

文件：662.13 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

丝印：G166；Package：SSOP；PARALLEL-LOAD 8-BIT SHIFT REGISTER

Synchronous Load Direct Overriding Clear Parallel-to-Serial Conversion Package Options Include Plastic Small-Outline (D) and Shrink Small-Outline (DB) Packages and Standard Plastic (N) DIP description The SN74ALS166 parallel-load 8-bit shift register is compatible with most other TTL log

文件：728.78 Kbytes 页数：20 Pages

TI

德州仪器