2SK1590

Marking：G16；Package：SC-59；MOS FIELD EFFECT TRANSISTOR

N-CHANNELMOSFET FORSWITCHING DESCRIPTION The2SK1590,N-channelverticaltypeMOSFET,isaswitching devicewhichcanbedrivendirectlybytheoutputofICshavinga 5Vpowersource. TheMOSFEThasexcellentswitchingcharacteristicsandis suitableforuseasahigh-speedswitchingd

BZG03C16

Marking：G16；Package：DO-214AC；Zener Diodes

G16N03S

Marking：G16N03；Package：SOP-8；N-Channel Enhancement Mode Power MOSFET

Description TheG16N03Susesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

G16P03D3

Marking：G16P03；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET

Description TheG16P03D3usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

G16P03D3A

Marking：G16P03；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET

Description TheG16P03D3Ausesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

G16P03S

Marking：G16P03；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

Description TheG16P03Susesadvancedtrenchtechnologytoprovide excellentR DS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application  Powerswitch DC/DCconverters

SGL160N60UFD

Marking：G160N60；Package：TO-264；Ultrafast IGBT

GeneralDescription FairchildsUFDseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses. TheUFDseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features •Highspeed

BZG03C160

Marking：G160；Package：DO-214AC；Zener Diodes