丝印：G170P06；Package：TO-263；P-Channel Enhancement Mode Power MOSFET

Description The G170P06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：995.61 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G170P06；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

Description The G170P06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.0138 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G170P06；Package：TO-263；P-Channel Enhancement Mode Power MOSFET

Description The G170P06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：995.61 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G170P06；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

Description The G170P06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.0138 Mbytes 页数：6 Pages

GOFORD

谷峰半导体