丝印：G18N20；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G18N20K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：886.44 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G18N20；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The G18N20T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：913.6 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G18N20；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G18N20K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：886.44 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G18N20；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The G18N20T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：913.6 Kbytes 页数：6 Pages

GOFORD

谷峰半导体