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G18P03D3

Marking:G18P03;Package:DFN3X3-8L;P-Channel Enhancement Mode Power MOSFET

Description TheG18P03D3usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

G18P03S

Marking:G18P03;Package:SOP-8;P-Channel Trench Power MOSFET

GeneralDescription TheG18P03Susesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas-5V.Thisdeviceissuitableforuseasa widevarietyofapplications. Features HighPowerandcurrenthandingcapability SurfaceMount

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

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