丝印：G16P03；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET

Description The G16P03D3A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：961.98 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

P-Channel Enhancement Mode Power MOSFET

Description The G16P03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：625.64 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

FCLGA1150

Intel

英特尔

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