丝印：G135P04；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET

Description The G135P04D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：966.83 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G135P04；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G135P04K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：912.34 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G135P04；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET

Description The G135P04D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：966.83 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G135P04；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G135P04K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：912.34 Kbytes 页数：6 Pages

GOFORD

谷峰半导体