| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
丝印：G15N60；Package：TO-263-3；Fast IGBT in NPT-technology Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution 文件：415.92 Kbytes 页数：12 Pages | Infineon 英飞凌 | Infineon | ||
丝印：G15N60；Package：TO-220-3-1；Fast IGBT in NPT-technology Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution 文件：415.92 Kbytes 页数：12 Pages | Infineon 英飞凌 | Infineon | ||
丝印：G15N60；Package：TO-220-3-1；Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high rugg 文件：339 Kbytes 页数：12 Pages | Infineon 英飞凌 | Infineon | ||
丝印：G15N60；Package：TO-247-3-21；Fast IGBT in NPT-technology Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution 文件：415.92 Kbytes 页数：12 Pages | Infineon 英飞凌 | Infineon | ||
丝印：G15N60；Package：TO-247-3-21；Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high rugg 文件：339 Kbytes 页数：12 Pages | Infineon 英飞凌 | Infineon | ||
丝印：G15N60；Package：TO-263-3；Fast IGBT in NPT-technology 文件：796.61 Kbytes 页数：11 Pages | Infineon 英飞凌 | Infineon | ||
G15N60 | Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high rugg 文件：339 Kbytes 页数：12 Pages | Infineon 英飞凌 | Infineon | |
High Speed IGBT in NPT-technology High Speed IGBT in NPT-technology • 30 lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - 文件：326.01 Kbytes 页数：11 Pages | Infineon 英飞凌 | Infineon | ||
High Speed IGBT in NPT-technology 文件：820.88 Kbytes 页数：11 Pages | Infineon 英飞凌 | Infineon |
详细参数
- 型号：
G15N60
- 功能描述：
IGBT 晶体管 FAST IGBT NPT TECH 600V 15A
- RoHS：
否
- 制造商：
Fairchild Semiconductor
- 配置：
集电极—发射极最大电压
- VCEO：
650 V
- 集电极—射极饱和电压：
2.3 V
- 栅极/发射极最大电压：
20 V 在25
- C的连续集电极电流：
150 A
- 栅极—射极漏泄电流：
400 nA
- 功率耗散：
187 W
- 封装/箱体：
TO-247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
25+ |
TO-263 |
32000 |
INFINEON/英飞凌全新特价SGB15N60即刻询购立享优惠#长期有货 |
询价 | ||
英飞翎 |
17+ |
D2PAK(TO-263) |
31518 |
原装正品 可含税交易 |
询价 | ||
INFINEON |
24+ |
P-TO263-3-2 |
8866 |
询价 | |||
INFINEON |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
TOS |
23+ |
DIP |
50000 |
全新原装假一赔十 |
询价 | ||
Infineo |
23+ |
TO-263 |
8650 |
受权代理!全新原装现货特价热卖! |
询价 | ||
中性 |
23+ |
SOT-23 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
Infineon |
21+ |
TO263 |
10000 |
原装现货假一罚十 |
询价 | ||
INFINEON/英飞凌 |
22+ |
TO-263 |
16000 |
只做原装正品 |
询价 | ||
INFINEON/英飞凌 |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
询价 |
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