| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
SGB15N60 | Fast IGBT in NPT-technology FastIGBTinNPT-technology •75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter •NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | |
SGB15N60 | Fast IGBT in NPT-technology | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | |
High Speed IGBT in NPT-technology HighSpeedIGBTinNPT-technology •30lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedforoperationabove30kHz •NPT-Technologyfor600Vapplicationsoffers: -parallelswitchingcapability -moderateEoffincreasewithtemperature - | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
Fast IGBT in NPT-technology | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
High Speed IGBT in NPT-technology | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
High Speed IGBT in NPT-technology | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
包装：管件 封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 31A 139W TO263-3 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
包装：管件 封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 27A 138W TO263-3 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
15Amps,600VoltsN-CHANNELMOSFET DESCRIPTION TheUTC15N60isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecostumerswithplanarstripeandDMOStechnology.Thistechnologyisspecializedinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypu | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
15A,600VN-CHANNELPOWERMOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
HighSwitchingSpeed | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
CoolMOSPowerTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 600V,13.6A,RDS(ON)=0.28W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V@TJmax,13.4A,RDS(ON)=0.28W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS |
详细参数
- 型号：
SGB15N60
- 功能描述：
IGBT 晶体管 FAST IGBT NPT TECH 600V 15A
- RoHS：
否
- 制造商：
Fairchild Semiconductor
- 配置：
集电极—发射极最大电压
- VCEO：
650 V
- 集电极—射极饱和电压：
2.3 V
- 栅极/发射极最大电压：
20 V 在25
- C的连续集电极电流：
150 A
- 栅极—射极漏泄电流：
400 nA
- 功率耗散：
187 W
- 封装/箱体：
TO-247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
英飞翎 |
17+ |
D2PAK(TO-263) |
31518 |
原装正品 可含税交易 |
询价 | ||
INFINEON/英飞凌 |
21+23+ |
TO263 |
13888 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
询价 | ||
INFINEON |
08+(pbfree) |
P-TO263-3-2 |
8866 |
询价 | |||
Infineon |
2017+ |
TO-263 |
65895 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
Infineon |
23+ |
SMD |
23399 |
全新原装现货,专业代理热卖 |
询价 | ||
INFINEON |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
INF |
RoHSCompliant |
Tape&Reel |
10 |
neworiginal |
询价 | ||
TOS |
23+ |
DIP |
50000 |
全新原装假一赔十 |
询价 | ||
Infineo |
23+ |
TO-263 |
8650 |
受权代理!全新原装现货特价热卖! |
询价 | ||
23+ |
N/A |
90350 |
正品授权货源可靠 |
询价 |
相关规格书
更多- SGB15N60E3261ATMA1
- SG-B1-MA-G5
- SG-B1-MB-G5
- SG-B1-SA-G5
- SG-B1-SB-G5
- SG-B2-K2AD-L5
- SG-B2-K2CD-L5
- SG-C1-21
- SG-C1-21-EMK
- SG-C1-21-MM
- SGC3S030
- SGC3S060
- SGC3S100
- SGC3S200
- SGC3S300
- SGD02N120
- SGD-120-3
- SGD24-M
- SGD28-M
- SGD35-M
- SGDR600P1
- SGF23N60UFTU
- SGF9C-TL-E
- SGGP.25.4.A.02
- SGGPD.25A
- SGH40N60UFDTU
- SGJ.0B.305.CLLPV
- SGJ.2B.319.CLLPV
- SGL160N60UFDTU
- SGL34-40
- SGL41-20-E3/96
- SGL41-30-E3/96
- SGL41-40-E3/96
- SGL41-40HE3/96
- SGL41-60-E3/96
- SGL50N60RUFDTU
- SGM2006M-T7
- SGM2014M
- SGM49450G
- SGN01G72F1BG1MT-CCWRT
- SGN02G72F1BD1SA-CCWRT
- SGP.1575.12.4.A.02
- SGP.1575.18.4.C.02
- SGP.1575.25.4.D.02
- SGP02N120XKSA1
相关库存
更多- SG-B1-MA-G1
- SG-B1-MB-G1
- SG-B1-SA-G1
- SG-B1-SB-G1
- SGB20S
- SG-B2-K2BD-L5
- SGB35SL
- SG-C1-21-E
- SG-C1-21-EMM
- SGC-12SP-04V-7507
- SGC3S030NM
- SGC3S060NM
- SGC3S100NM
- SGC3S200NM
- SGC3S300NM
- SGD102M
- SGD24M
- SGD24-M-420
- SGD28-M-420
- SGDR2500P2
- SG-EP3
- SGF5N150UFTU
- SGGP.18.4.A.02
- SGGPD.18A
- SGH30N60RUFDTU
- SGH40N60UFTU
- SGJ.1B.306.CLLPV
- SG-K12A
- SGL34-20
- SGL41-20
- SGL41-30
- SGL41-40-E3/1
- SGL41-40-E3/96-CUTTAPE
- SGL41-50-E3/96
- SGL41-60-E3/97
- SGM2004M-T8
- SGM2014AM
- SGM2016AN-T7
- SGN01G64D2BG1SA-CCWRT
- SGN02G64D2BD1SA-DCWRT
- SGNMNC3706HTT
- SGP.1575.15.4.A.02
- SGP.1575.25.4.C.02
- SGP02N120
- SGP07N120
