STGB15M65DF2芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
STGB15M65DF2	文件：1.11098 Mbytes Page：19 Pages	丝印：G15M65DF2；Package：D2PAK；Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a D²PAK package Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are ess 文件：1.11098 Mbytes 页数：19 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STGB15M65DF2	文件：1.08019 Mbytes Page：19 Pages	丝印：G15M65DF2；Package：D2PAK；Trench gate field-stop IGBT M series, 650 V, 15 A low loss 文件：1.08019 Mbytes 页数：19 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
G15M65DF2	文件：1.11098 Mbytes Page：19 Pages	Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a D²PAK package Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are ess 文件：1.11098 Mbytes 页数：19 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

更多G15M65DF2供应商更新时间2025-8-14 16:38:00