丝印：G120P06；Package：TO-263；P-Channel Enhancement Mode Power MOSFET

Description The G120P06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：599.26 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

P-Channel Enhancement Mode Power MOSFET

Description The G120P06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：492.02 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

120A, 60V P-CHANNEL POWER MOSFET

文件：131.27 Kbytes 页数：3 Pages

UTC

友顺

High Frequency Rectification

Construction: Schottky Barrier Diode Application : High Frequency Rectification

文件：50.9 Kbytes 页数：6 Pages

NIEC