G120P06T规格书应用电路供应商报价GOFORD-114ic电子网

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零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
G120P06T	文件：492.02 Kbytes Page：6 Pages	Marking：G120P06；Package：TO-220；P-Channel Enhancement Mode Power MOSFET Description TheG120P06Tusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters	GOFORDGOFORD SEMICONDUCTOR 谷峰半导体	GOFORD
C120P06QE	文件：50.9 Kbytes Page：6 Pages	HighFrequencyRectification Construction:SchottkyBarrierDiode Application:HighFrequencyRectification	NIEC Nihon Inter Electronics Corporation	NIEC
G120P06M	文件：599.26 Kbytes Page：6 Pages	P-ChannelEnhancementModePowerMOSFET Description TheG120P06Musesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters	GOFORDGOFORD SEMICONDUCTOR 谷峰半导体	GOFORD
UTT120P06	文件：131.27 Kbytes Page：3 Pages	120A,60VP-CHANNELPOWERMOSFET	UTCUnisonic Technologies 友顺友顺科技股份有限公司	UTC

更多G120P06T供应商更新时间2025-5-20 11:06:00