G120P06T规格书应用电路供应商报价GOFORD-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
G120P06T	文件：492.02 Kbytes Page：6 Pages	丝印：G120P06；Package：TO-220；P-Channel Enhancement Mode Power MOSFET Description The G120P06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：492.02 Kbytes 页数：6 Pages	GOFORD 谷峰半导体	GOFORD
G120P06T	文件：300 bytes Page：1 Pages	Trench Mosfet	GOFORD 谷峰半导体	GOFORD
UTT120P06	文件：131.27 Kbytes Page：3 Pages	120A, 60V P-CHANNEL POWER MOSFET 文件：131.27 Kbytes 页数：3 Pages	UTC 友顺	UTC
C120P06QE	文件：50.9 Kbytes Page：6 Pages	High Frequency Rectification Construction: Schottky Barrier Diode Application : High Frequency Rectification 文件：50.9 Kbytes 页数：6 Pages	NIEC	NIEC
G120P06M	文件：599.26 Kbytes Page：6 Pages	P-Channel Enhancement Mode Power MOSFET Description The G120P06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：599.26 Kbytes 页数：6 Pages	GOFORD 谷峰半导体	GOFORD

更多G120P06T供应商更新时间2025-10-7 11:06:00