G120P06T

Marking：G120P06；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description TheG120P06Tusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

G12N65F

Marking：G12N65；Package：TO-220F；N-Channel Enhancement Mode Power MOSFET

Description ThisadvancedMOSFETfamilyhasoptimizedon-state resistance,andalsoprovidessuperiorswitching performanceandhigheravalancheenergystrength.This devicefamilyissuitableforhighefficiencyswitchmode powersupplies. Application lLEDpowersupplies lCellPhoneC

G12P03D3

Marking：G12P03；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET

Description TheG12P03D3usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

G12P04K

Marking：G12P04；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description TheG12P04Kusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

G12P06K

Marking：G12P06；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description TheG12P06Kusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

G12P10K

Marking：G12P10；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description TheG12P10Kusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

G12P10KE

Marking：G12P10；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description TheG12P10KEusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

G12P10TE

Marking：G12P10；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description TheG12P10TEusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

RQ3G120BJFRA

Marking：G120BJ；Package：HSMT8AG；Pch -40V -12A Power MOSFET

Features 1)Smallhigh-poweredpackagereduces mountingareaby64%atamaximum 2)Realizationofhighmountingreliability byoriginalterminalandplatingtreatment 3)AEC-Q101Qualified Application ADAS/Info./Lighting/Body

STGYA120M65DF2AG

Marking：G120M65DF2AG；Package：Max247；Automotive-grade trench gate field-stop, 650 V, 120 A, low-loss, M series IGBT in a Max247 long leads package

Features •AEC-Q101qualified •6μsofshort-circuitwithstandtime •VCE(sat)=1.65V(typ.)@IC=120A •Tightparameterdistribution •Saferparalleling •PositiveVCE(sat)temperaturecoefficient •Lowthermalresistance •Softandveryfastrecoveryantiparalleldiode •Maximumj