BZG03C120

Marking：G120；Package：DO-214AC；Zener Diodes

G120N02D32

Marking：G120N02；Package：DFN3X3-8LDual；DUAL N-Channel Enhancement Mode Power MOSFET

Description TheG120N02D32usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

G120N03D3

Marking：G120N03；Package：DFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Description TheG120N03D3usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

G120N03D32

Marking：G120N03；Package：DFN3X3-8LDual；DUAL N-Channel Enhancement Mode Power MOSFET

Description TheG120N03D32usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

G120P03S2

Marking：G120P03；Package：SOP-8Dual；DUAL P-Channel Enhancement Mode Power MOSFET

Description TheG120P03S2usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

G120P06M

Marking：G120P06；Package：TO-263；P-Channel Enhancement Mode Power MOSFET

Description TheG120P06Musesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

G120P06T

Marking：G120P06；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description TheG120P06Tusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

RQ3G120BJFRA

Marking：G120BJ；Package：HSMT8AG；Pch -40V -12A Power MOSFET

Features 1)Smallhigh-poweredpackagereduces mountingareaby64%atamaximum 2)Realizationofhighmountingreliability byoriginalterminalandplatingtreatment 3)AEC-Q101Qualified Application ADAS/Info./Lighting/Body

STGYA120M65DF2AG

Marking：G120M65DF2AG；Package：Max247；Automotive-grade trench gate field-stop, 650 V, 120 A, low-loss, M series IGBT in a Max247 long leads package

Features •AEC-Q101qualified •6μsofshort-circuitwithstandtime •VCE(sat)=1.65V(typ.)@IC=120A •Tightparameterdistribution •Saferparalleling •PositiveVCE(sat)temperaturecoefficient •Lowthermalresistance •Softandveryfastrecoveryantiparalleldiode •Maximumj

HYG120P06LR1D

Marking：G120P06L；Package：TO-252-2L；P-Channel Enhancement Mode MOSFET