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STGYA120M65DF2AG	文件：2.18639 Mbytes Page：14 Pages	Marking：G120M65DF2AG；Package：Max247；Automotive-grade trench gate field-stop, 650 V, 120 A, low-loss, M series IGBT in a Max247 long leads package Features •AEC-Q101qualified •6μsofshort-circuitwithstandtime •VCE(sat)=1.65V(typ.)@IC=120A •Tightparameterdistribution •Saferparalleling •PositiveVCE(sat)temperaturecoefficient •Lowthermalresistance •Softandveryfastrecoveryantiparalleldiode •Maximumj	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团	STMICROELECTRONICS

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功能描述/丝印

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文件：2.18639 Mbytes

Page：14 Pages

Marking：G120M65DF2AG；Package：Max247；Automotive-grade trench gate field-stop, 650 V, 120 A, low-loss, M series IGBT in a Max247 long leads package

Features •AEC-Q101qualified •6μsofshort-circuitwithstandtime •VCE(sat)=1.65V(typ.)@IC=120A •Tightparameterdistribution •Saferparalleling •PositiveVCE(sat)temperaturecoefficient •Lowthermalresistance •Softandveryfastrecoveryantiparalleldiode •Maximumj

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

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