Features

• AEC-Q101 qualified

• 6 μs of short-circuit withstand time

• VCE(sat) = 1.65 V (typ.) @ IC = 120 A

• Tight parameter distribution

• Safer paralleling

• Positive VCE(sat) temperature coefficient

• Low thermal resistance

• Soft and very fast recovery antiparallel diode

• Maximum junction temperature: TJ = 175 °C

Applications

• Heating system

• HV battery disconnect and fire-off system

• Main inverter (electric traction)

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop

structure. The device is part of the M series IGBTs, which represent an optimal

balance between inverter system performance and efficiency where the low-loss

and the short-circuit functionality is essential. Furthermore, the positive VCE(sat)

temperature coefficient and the tight parameter distribution result in safer paralleling

operation.

STGYA120M65DF2AG属于分立半导体产品 > 晶体管 - UGBT、MOSFET - 单。意法半导体（ST）集团制造生产的STGYA120M65DF2AG晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。