Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching

文件：48.92 Kbytes 页数：9 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon N-Channel MOS FET

• Low on-resistance\n• High speed switching\n• Low drive current\n• 4 V gate drive device\n   Can be driven from 5 V source\n• Suitable for motor drive, DC-DC converter, power switch and solenoid driveApplication\nHigh speed power switching\n ;

HITACHI

日立

N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

HGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Low Drain-Source ON Resistance : RDS(ON) = 0.74Ω (Typ.) High Forward Transfer Admittance : |Yfs| = 6.8 S (Typ.) Low Leakage Current : IDSS = 100 uA(Max.) (VDS = 600V)

文件：282.9 Kbytes 页数：5 Pages

TOSHIBA

东芝

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching

文件：48.92 Kbytes 页数：9 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching

文件：48.92 Kbytes 页数：9 Pages

HitachiHitachi Semiconductor

日立日立公司

丝印：IPAK；Package：TO-251；isc N-Channel MOSFET Transistor

文件：318.12 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

文件：309.91 Kbytes 页数：2 Pages

ISC

无锡固电

N CHANNEL MOS TYPE (HIGH SPEED/ HIGH VOLTAGE SWITCHING/ CHOPPER REGULATOR/ DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

Toshiba

东芝

Silicon N-Channel MOS FET

HITACHI

日立