Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source. • Suitable for DC – DC converter, motor drive, power switch, solenoid drive Application High speed power switching

文件：88.59 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source. • Suitable for DC – DC converter, motor drive, power switch, solenoid drive Application High speed power switching

文件：88.59 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source. • Suitable for DC – DC converter, motor drive, power switch, solenoid drive Application High speed power switching

文件：88.59 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device - - - can be driven from 5 V source. • Suitable for DC – DC converter, motor drive, power switch, solenoid drive Application High speed power switching

文件：29.76 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

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