首页 >2SK170>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

2SK170

Low Noise Audio Amplifier Applications

Low Noise Audio Amplifier Applications • Recommended for first stages of EQ and M.C. head amplifiers. • High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA) • High breakdown voltage: VGDS = −40 V • Low noise: En = 0.95 nV/Hz1/2 (typ.) (VDS = 10 V, ID = 1 mA, f = 1 kHz) • High

文件:345.12 Kbytes 页数:5 Pages

TOSHIBA

东芝

2SK170

Low Noise Audio Amplifier Applications

Low Noise Audio Amplifier Applications • Recommended for first stages of EQ and M.C. head amplifiers. • High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA) • High breakdown voltage: VGDS = −40 V • Low noise: En = 0.95 nV/Hz1/2 (typ.) (VDS = 10 V, ID = 1 mA, f = 1 kHz) • High

文件:320.27 Kbytes 页数:5 Pages

TOSHIBA

东芝

2SK170

Low Noise Audio Amplifier Applications

Low Noise Audio Amplifier Applications • Recommended for first stages of EQ and M.C. head amplifiers. • High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA) • High breakdown voltage: VGDS = −40 V • Low noise: En = 0.95 nV/Hz1/2 (typ.) (VDS = 10 V, ID = 1 mA, f = 1 kHz) • High

文件:320.27 Kbytes 页数:5 Pages

TOSHIBA

东芝

2SK170

FET, Silicon N Channel Junction Type(for Low Noise Audio Amplifier)

Low Noise Audio Amplifier Applications • Recommended for first stages of EQ and M.C. head amplifiers. • High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA) • High breakdown voltage: VGDS = −40 V • Low noise: En = 0.95 nV/Hz1/2 (typ.) (VDS = 10 V, ID = 1 mA, f = 1 kHz) • High

文件:218.88 Kbytes 页数:4 Pages

TOSHIBA

东芝

2SK170

Silicon N Channel Junction Type Low Noise Audio Amplifier Applications

文件:644.2 Kbytes 页数:5 Pages

TOSHIBA

东芝

2SK170

Field Effect Transistor Silicon N Channel Junction Type Low Noise Audio Amplifier Applications

Toshiba

东芝

2SK170-BL

Low Noise Audio Amplifier Applications

Low Noise Audio Amplifier Applications • Recommended for first stages of EQ and M.C. head amplifiers. • High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA) • High breakdown voltage: VGDS = −40 V • Low noise: En = 0.95 nV/Hz1/2 (typ.) (VDS = 10 V, ID = 1 mA, f = 1 kHz) • High

文件:345.12 Kbytes 页数:5 Pages

TOSHIBA

东芝

2SK170-GR

Low Noise Audio Amplifier Applications

Low Noise Audio Amplifier Applications • Recommended for first stages of EQ and M.C. head amplifiers. • High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA) • High breakdown voltage: VGDS = −40 V • Low noise: En = 0.95 nV/Hz1/2 (typ.) (VDS = 10 V, ID = 1 mA, f = 1 kHz) • High

文件:320.27 Kbytes 页数:5 Pages

TOSHIBA

东芝

2SK170-V

Low Noise Audio Amplifier Applications

Low Noise Audio Amplifier Applications • Recommended for first stages of EQ and M.C. head amplifiers. • High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA) • High breakdown voltage: VGDS = −40 V • Low noise: En = 0.95 nV/Hz1/2 (typ.) (VDS = 10 V, ID = 1 mA, f = 1 kHz) • High

文件:320.27 Kbytes 页数:5 Pages

TOSHIBA

东芝

2SK170_07

Silicon N Channel Junction Type Low Noise Audio Amplifier Applications

文件:644.2 Kbytes 页数:5 Pages

TOSHIBA

东芝

详细参数

  • 型号:

    2SK170

  • 制造商:

    Panasonic Industrial Company

  • 功能描述:

    TRANSISTOR

供应商型号品牌批号封装库存备注价格
TOS
13+
TO-92
128000
询价
TOS
24+
原厂封装
5500
原装现货假一罚十
询价
24+
60000
询价
TOSHIBA(东芝)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
TOSHIBA
23+
TO-92
3000
原装正品假一罚百!可开增票!
询价
国产
23+
TO-92
50000
全新原装正品现货,支持订货
询价
TOS
23+
TO-92
50000
全新原装正品现货,支持订货
询价
23+
to-92
36589
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
TOSHIBA
22+
TO92
8000
原装正品支持实单
询价
TOS
TO-92
72
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
更多2SK170供应商 更新时间2026-4-19 9:01:00