N-CHANNEL MOS FET FOR SWITCHING

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

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NEC

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MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FET FOR SWITCHING

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RENESAS

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MOS Field Effect Transistor

Features ● Can be driven directly an IC operating with a 5V single power supply. ● Low ON-state resistance RDS(on)=0.8 MAX. At VGS=4V,ID=0.5A RDS(on)=0.4 MAX. At VGS=10V,ID=0.5A

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KEXIN

科信电子

30V N-Channel MOSFET

RM TECHNOLOGY

瑞美科

Power MOSFETs-Power MOSFETs for Automotive

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N-Channel MOSFET

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KEXIN

科信电子

N-CHANNEL MOSFET FOR SWITCHING

文件：214.1 Kbytes 页数：8 Pages

RENESAS

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N-CHANNEL MOSFET FOR SWITCHING

文件：214.1 Kbytes 页数：8 Pages

RENESAS

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N-CHANNEL MOSFET FOR SWITCHING

文件：214.1 Kbytes 页数：8 Pages

RENESAS

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Power MOSFETs for Automotive

Support is limited to customers who have already adopted these products.\n\nThe 2SK1483C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 2. 5 V power source. • Directly driven by a 2.5 V power source.\n• Low on-state resistance RDS(on)1 = 63 mΩ MAX. (VGS = 4.5 V, ID = 2.0 A) RDS(on)2 = 65 mΩ MAX. (VGS = 4.0 V, ID = 2.0 A) RDS(on)3 = 91 mΩ MAX. (VGS = 2.5 V, ID = 2.0 A);

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