Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device - - - can be driven from 5 V source. • Suitable for DC-DC converter, motor drive, power switch, solenoid drive Application High speed power switching

文件：40.81 Kbytes 页数：9 Pages

HITACHIHitachi Semiconductor

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Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source. • Suitable for DC-DC converter, motor drive, power switch, solenoid drive Application High speed power switching

文件：75.79 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N-Channel MOS FET

• Low on-resistance\n• High speed switching\n• Low drive current\n• 4 V gate drive device can be driven from 5 V source.\n• Suitable for DC-DC converter, motor drive, power switch, solenoid driveApplication\nHigh speed power switching\n ;

Renesas

瑞萨

Silicon N-Channel MOS FET

• Low on-resistance\n• High speed switching\n• Low drive current\n• 4 V gate drive device - - - can be driven from 5 V source.\n• Suitable for DC-DC converter, motor drive, power switch, solenoid driveApplication\nHigh speed power switching\n ;

HITACHI

日立

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source. • Suitable for DC-DC converter, motor drive, power switch, solenoid drive Application High speed power switching

文件：75.79 Kbytes 页数：7 Pages

RENESAS

瑞萨