2SK1772HYTR-E资料datasheet下载贸易商瑞萨-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
2SK1772HYTR-E	文件：75.79 Kbytes Page：7 Pages	Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source. • Suitable for DC-DC converter, motor drive, power switch, solenoid drive Application High speed power switching 文件：75.79 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS
2SK1772	文件：75.79 Kbytes Page：7 Pages	Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source. • Suitable for DC-DC converter, motor drive, power switch, solenoid drive Application High speed power switching 文件：75.79 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS
2SK1772	文件：40.81 Kbytes Page：9 Pages	Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device - - - can be driven from 5 V source. • Suitable for DC-DC converter, motor drive, power switch, solenoid drive Application High speed power switching 文件：40.81 Kbytes 页数：9 Pages	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SK1824	文件：0 bytes Page：0 Pages	SOD523	RENESAS 瑞萨上传：深圳市正纳电子有限公司	RENESAS
2SK1824-T1-A	文件：0 bytes Page：0 Pages	SOT423	RENESAS 瑞萨上传：深圳市正纳电子有限公司	RENESAS

更多2SK1772HYTR-E供应商更新时间2026-1-17 10:28:00