MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SJ647 is a switching device which can be driven directly by a 2.5 V power source. The 2SJ647 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V drive

文件：62.95 Kbytes 页数：6 Pages

NEC

瑞萨

丝印：H22；Package：SC-70；MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SJ647 is a switching device which can be driven directly by a 2.5 V power source. The 2SJ647 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power swit

文件：197.82 Kbytes 页数：8 Pages

RENESAS

瑞萨

Pch Single Power Mosfet -20V -0.4A 1450Mohm Ssp/Sc-70

The 2SJ647 is a Pch Single Power Mosfet -20V -0.4A 1450Mohm Ssp/Sc-70. • 2.5 V drive available\n• Low on-state resistance RDS(on)1 = 1.45 Ω MAX. (VGS = −4.5 V, ID = −0.2 A) RDS(on)2 = 1.55 Ω MAX. (VGS = −4.0 V, ID = −0.2 A) RDS(on)3 = 2.98 Ω MAX. (VGS = −2.5 V, ID = −0.15 A)\n文档文档标题类型日期Attention of Handling Semiconductor DevicesPDF648 KB日本語应用文档 2021年4月16日2SJ647 Data Sh;

Renesas

瑞萨

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

文件：198.36 Kbytes 页数：8 Pages

RENESAS

瑞萨