MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SJ626 is a switching device which can be driven directly by a 4.0 V power source. The 2SJ626 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 4.0 V drive

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NEC

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Old Company Name in Catalogs and Other Documents

DESCRIPTION The 2SJ626 is a switching device which can be driven directly by a 4.0 V power source. The 2SJ626 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 4.0 V drive

文件：200.88 Kbytes 页数：10 Pages

RENESAS

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60V P-CHANNEL ENHANCEMENT MODE MOSFET With ESD

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TECHPUBLIC

台舟电子

Power MOSFETs for Automotive

Support is limited to customers who have already adopted these products.\n\nThe 2SJ626 is a switching device which can be driven directly by a 4. 0 V power source. The 2SJ626 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power sw • 4.0 V drive available\n• Low on-state resistance RDS(on)1 = 388 mΩ MAX. (VGS = –10 V, ID = –1.0 A) RDS(on)2 = 514 mΩ MAX. (VGS = –4.5 V, ID = –1.0 A) RDS(on)3 = 556 mΩ MAX. (VGS = –4.0 V, ID = –1.0 A);

Renesas

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P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

文件：200.88 Kbytes 页数：10 Pages

RENESAS

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