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2SJ605-ZJ

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The2SJ605isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=20mΩMAX.(VGS=–10V,ID=–33A) RDS(on)2=31mΩMAX.(VGS=–4.0V,ID=–33A) •Lowinputcapacitance Ci

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

2SJ605-ZJ

P-Channel MOSFET

■Features ●VDS(V)=-60V ●ID=-65A ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

2SJ605-ZJ

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SJ605isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=20mΩMAX.(VGS=–10V,ID=–33A) RDS(on)2=31mΩMAX.(VGS=–4.

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

2SJ605

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SJ605isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=20mΩMAX.(VGS=–10V,ID=–33A) RDS(on)2=31mΩMAX.(VGS=–4.

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

2SJ605

MOSFieldEffectTransistors

Features ●Superlowon-stateresistance: RDS(on)1=20mMAX.(VGS=-10V,ID=-33A) RDS(on)2=31mMAX.(VGS=-4.0V,ID=-33A) ●Lowinputcapacitance Ciss=4600pFTYP.(VDS=-10V,VGS=0A) ●Built-ingateprotectiondiode

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

2SJ605

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ605isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=20mΩMAX.(VGS=–10V,ID=–33A) RDS(on)2=31mΩMAX.(VGS=–4.0V,ID=–33A) •Lowinputcapacitance Ci

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

2SJ605-S

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ605isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=20mΩMAX.(VGS=–10V,ID=–33A) RDS(on)2=31mΩMAX.(VGS=–4.0V,ID=–33A) •Lowinputcapacitance Ci

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

2SJ605-S

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SJ605isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=20mΩMAX.(VGS=–10V,ID=–33A) RDS(on)2=31mΩMAX.(VGS=–4.

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

2SJ605-Z

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SJ605isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=20mΩMAX.(VGS=–10V,ID=–33A) RDS(on)2=31mΩMAX.(VGS=–4.

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

2SJ605-Z

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ605isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=20mΩMAX.(VGS=–10V,ID=–33A) RDS(on)2=31mΩMAX.(VGS=–4.0V,ID=–33A) •Lowinputcapacitance Ci

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

详细参数

  • 型号:

    2SJ605-ZJ

  • 制造商:

    NEC

  • 制造商全称:

    NEC

  • 功能描述:

    MOS FIELD EFFECT TRANSISTOR

供应商型号品牌批号封装库存备注价格
NEC
17+
TO-263
31518
原装正品 可含税交易
询价
NEC
24+
TO-263
8866
询价
NEC
23+
TO-263
11757
全新原装
询价
NEC
1822+
TO-263
9852
只做原装正品假一赔十为客户做到零风险!!
询价
NEC
18+
TO-263
41200
原装正品,现货特价
询价
NEC
20+
TO-263
36900
原装优势主营型号-可开原型号增税票
询价
NEC
23+
TO-263
50000
全新原装正品现货,支持订货
询价
NEC
24+
NA/
18500
优势代理渠道,原装正品,可全系列订货开增值税票
询价
RENESAS/瑞萨
2022+
TO-263
30000
进口原装现货供应,原装 假一罚十
询价
RENESAS/瑞萨
20+
TO-263
32500
现货很近!原厂很远!只做原装
询价
更多2SJ605-ZJ供应商 更新时间2025-5-21 14:00:00