2SJ601-Z

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The2SJ601isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES •Lowon-stateresistance: RDS(on)1=31mΩMAX.(VGS=–10V,ID=–18A) RDS(on)2=46mΩMAX.(VGS=–4.0V,ID=–18A) •Lowinputcapacitance:

2SJ601-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ601isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES Lowon-stateresistance: RDS(on)1=31mΩMAX.(VGS=–10V,ID=–18A) RDS(on)2=46mΩMAX.(VGS=–4.0V,ID=–18A) Lowinput

2SJ601-Z

Isc P-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=-36A@TC=25℃ ·DrainSourceVoltage-VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=31mΩ(Max)@VGS=-10V DESCRIPTION ·Solenoid,motorandlampdriver

2SJ601-Z-E1-AZ

P-Channel 60 V (D-S) MOSFET

2SJ601

P-Channel60-V(D-S)MOSFET

FEATURES RDS(ON)14mQ@VGs=-10V(Typ) RDs(ON)16mQ@VGs=-4.5V(Typ) SuperhighdensitycelldesignforextremelylowRDS(ON) Exceptionalon-resistanceandmaximumDCcurrent capability

2SJ601

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ601isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES Lowon-stateresistance: RDS(on)1=31mΩMAX.(VGS=–10V,ID=–18A) RDS(on)2=46mΩMAX.(VGS=–4.0V,ID=–18A) Lowinput

2SJ601

P-ChannelMOSFETusesadvancedtrenchtechnology

2SJ601

MOSFieldEffectTransistor

MOSFieldEffectTransistor Features Lowon-resistance RDS(on)1=31mMAX.(VGS=-10V,ID=-18A) RDS(on)2=46mMAX.(VGS=-4.0V,ID=-18A) LowCiss:Ciss=3300pFTYP. Built-ingateprotectiondiode

2SJ601

SWITCHINGP-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION The2SJ601isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES •Lowon-stateresistance: RDS(on)1=31mΩMAX.(VGS=–10V,ID=–18A) RDS(on)2=46mΩMAX.(VGS=–4.0V,ID=–18A) •Lowinputcapacitance: