Pch Single Power Mosfet -60V -36A 31Mohm Mp-3Zk/To-252

The 2SJ601 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. • Low on-state resistance:RDS(on)1 = 31 mΩ MAX. (VGS = –10 V, ID = –18 A)RDS(on)2 = 46 mΩ MAX. (V/GS = –4.0 V, ID = –18 A)\n• Low input capacitance:Ciss = 3300 pF TYP. (VDS = –10 V, VGS = 0 V)\n• Built-in gate protection diode\n• TO-251/TO-252 package;

Renesas

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P-Channel MOSFET uses advanced trench technology

文件：1.22222 Mbytes 页数：4 Pages

DOINGTER

杜因特

MOS Field Effect Transistor

MOS Field Effect Transistor Features Low on-resistance RDS(on)1 = 31 m MAX. (VGS =-10 V, ID = -18 A) RDS(on)2 = 46m MAX. (VGS = -4.0 V, ID =-18 A) Low Ciss: Ciss = 3300 pF TYP. Built-in gate protection diode

文件：51.52 Kbytes 页数：2 Pages

KEXIN

科信电子

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SJ601 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance: RDS(on)1 = 31 mΩ MAX. (VGS = –10 V, ID = –18 A) RDS(on)2 = 46 mΩ MAX. (VGS = –4.0 V, ID = –18 A) • Low input capacitance:

文件：54.78 Kbytes 页数：4 Pages

NEC

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