SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SJ601 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance: RDS(on)1 = 31 mΩ MAX. (VGS = –10 V, ID = –18 A) RDS(on)2 = 46 mΩ MAX. (VGS = –4.0 V, ID = –18 A) • Low input capacitance:

文件：54.78 Kbytes 页数：4 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ601 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES Low on-state resistance: RDS(on)1 = 31 mΩ MAX. (VGS = –10 V, ID = –18 A) RDS(on)2 = 46 mΩ MAX. (VGS = –4.0 V, ID = –18 A) Low input

文件：238.77 Kbytes 页数：10 Pages

RENESAS

瑞萨

MOS Field Effect Transistor

MOS Field Effect Transistor Features Low on-resistance RDS(on)1 = 31 m MAX. (VGS =-10 V, ID = -18 A) RDS(on)2 = 46m MAX. (VGS = -4.0 V, ID =-18 A) Low Ciss: Ciss = 3300 pF TYP. Built-in gate protection diode

文件：51.52 Kbytes 页数：2 Pages

KEXIN

科信电子

丝印：J601；Package：TO-252-3L；P-Channel 60-V (D-S) MOSFET

FEATURES RDS(ON) 14mQ@VGs=-10V (Typ) RDs(ON) 16mQ@VGs=-4.5V(Typ) Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability

文件：2.71344 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

P-Channel MOSFET uses advanced trench technology

文件：1.22222 Mbytes 页数：4 Pages

DOINGTER

杜因特

Pch Single Power Mosfet -60V -36A 31Mohm Mp-3/To-251

The 2SJ601 is a Pch Single Power Mosfet -60V -36A 31Mohm Mp-3/To-251. • Low on-state resistance: RDS(on)1 = 31 mΩ MAX. (VGS = –10 V, ID = –18 A) RDS(on)2 = 46 mΩ MAX. (VGS = –4.0 V, ID = –18 A)\n• Low input capacitance: Ciss = 3300 pF TYP. (VDS = –10 V, VGS = 0 V)\n• Built-in gate protection diode\n• TO-251/TO-252 package\n文档文档标题类型日期Attention of Handling Semiconductor;

Renesas

瑞萨

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SJ601 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance: RDS(on)1 = 31 mΩ MAX. (VGS = –10 V, ID = –18 A) RDS(on)2 = 46 mΩ MAX. (VGS = –4.0 V, ID = –18 A) • Low input capacitance:

文件：54.78 Kbytes 页数：4 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ601 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES Low on-state resistance: RDS(on)1 = 31 mΩ MAX. (VGS = –10 V, ID = –18 A) RDS(on)2 = 46 mΩ MAX. (VGS = –4.0 V, ID = –18 A) Low input

文件：238.77 Kbytes 页数：10 Pages

RENESAS

瑞萨

Isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -36A@ TC=25℃ ·Drain Source Voltage -VDSS= -60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 31mΩ(Max)@VGS= -10V DESCRIPTION ·Solenoid, motor and lamp driver

文件：261.12 Kbytes 页数：2 Pages

ISC

无锡固电

SWITCHING P-CHANNEL POWER MOS FET

文件：239.37 Kbytes 页数：10 Pages

RENESAS

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