2SJ601

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The2SJ601isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES •Lowon-stateresistance: RDS(on)1=31mΩMAX.(VGS=–10V,ID=–18A) RDS(on)2=46mΩMAX.(VGS=–4.0V,ID=–18A) •Lowinputcapacitance:

2SJ601

MOS Field Effect Transistor

MOSFieldEffectTransistor Features Lowon-resistance RDS(on)1=31mMAX.(VGS=-10V,ID=-18A) RDS(on)2=46mMAX.(VGS=-4.0V,ID=-18A) LowCiss:Ciss=3300pFTYP. Built-ingateprotectiondiode

2SJ601

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ601isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES Lowon-stateresistance: RDS(on)1=31mΩMAX.(VGS=–10V,ID=–18A) RDS(on)2=46mΩMAX.(VGS=–4.0V,ID=–18A) Lowinput

2SJ601

Marking：J601；Package：TO-252-3L；P-Channel 60-V (D-S) MOSFET

FEATURES RDS(ON)14mQ@VGs=-10V(Typ) RDs(ON)16mQ@VGs=-4.5V(Typ) SuperhighdensitycelldesignforextremelylowRDS(ON) Exceptionalon-resistanceandmaximumDCcurrent capability

2SJ601

Pch Single Power Mosfet -60V -36A 31Mohm Mp-3/To-251; • Low on-state resistance: RDS(on)1 = 31 mΩ MAX. (VGS = –10 V, ID = –18 A) RDS(on)2 = 46 mΩ MAX. (VGS = –4.0 V, ID = –18 A)\n• Low input capacitance: Ciss = 3300 pF TYP. (VDS = –10 V, VGS = 0 V)\n• Built-in gate protection diode\n• TO-251/TO-252 package\n文档文档标题类型日期Attention of Handling Semiconductor DevicesPDF648 KB日本語应用文档 2021年4月16日2SJ601 Data SheetPDF232 KB数据手册 2006年8月1日功率MOS FET 功率MOS FET使用时的注意事项PDF1.60 MB其他 2008年2月7日功率MOS FET 应用例子PDF721 KB其他 2008年2月7日可靠性手册PDF15.93 MB其他 2007年9月26日Addhidden documents 项目info: For device-specific or order-specific documentation, submit a support request.developer_board设计和开发模型ECAD 模块Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.扩展 ECAD 模块 模型TitleTypeDate2SJ601 SPICE DataZIP0 KB模型 - SPICE2018年8月6日2SJ601 SPICEZIP0 KB模型 - SPICE2018年7月29日 2 models产品选择Loading products for parametric search...产品选择导出settings切换fullscreen全屏settings_backup_restore重置help小贴士器件号 \n 有效 (0) 待停产/NRNDPkg. TypeMP-3Logical OperatorCarrier TypeBagLogical Operator购买 / 样片购买 / 报价Logical OperatorTable of contentsStock Check\nPackage information\nECAD 模块\n;

The 2SJ601 is a Pch Single Power Mosfet -60V -36A 31Mohm Mp-3/To-251.

2SJ601

P-Channel MOSFET uses advanced trench technology

2SJ601-Z

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The2SJ601isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES •Lowon-stateresistance: RDS(on)1=31mΩMAX.(VGS=–10V,ID=–18A) RDS(on)2=46mΩMAX.(VGS=–4.0V,ID=–18A) •Lowinputcapacitance:

2SJ601-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ601isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES Lowon-stateresistance: RDS(on)1=31mΩMAX.(VGS=–10V,ID=–18A) RDS(on)2=46mΩMAX.(VGS=–4.0V,ID=–18A) Lowinput

2SJ601-Z

Isc P-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=-36A@TC=25℃ ·DrainSourceVoltage-VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=31mΩ(Max)@VGS=-10V DESCRIPTION ·Solenoid,motorandlampdriver

2SJ601_15

SWITCHING P-CHANNEL POWER MOS FET