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2SJ603-Z

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The2SJ603isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES •Superlowon-stateresistance: RDS(on)1=48mΩMAX.(VGS=−10V,ID=−13A) RDS(on)2=75mΩMAX.(VGS=−4.0V,ID=−13A) •Lowinputcapacitance: Ciss=1

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

2SJ603-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ603isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES •Superlowon-stateresistance: RDS(on)1=48mΩMAX.(VGS=−10V,ID=−13A) RDS(on)2=75mΩMAX.(VGS=−4.0V,ID=−13A) •

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

2SJ603-ZJ

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The2SJ603isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES •Superlowon-stateresistance: RDS(on)1=48mΩMAX.(VGS=−10V,ID=−13A) RDS(on)2=75mΩMAX.(VGS=−4.0V,ID=−13A) •Lowinputcapacitance: Ciss=1

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

2SJ603-ZJ

P-Channel MOSFET

■Features ●VDS(V)=-60V ●ID=-25A ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

2SJ603-ZJ

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ603isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES •Superlowon-stateresistance: RDS(on)1=48mΩMAX.(VGS=−10V,ID=−13A) RDS(on)2=75mΩMAX.(VGS=−4.0V,ID=−13A) •

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

2SJ603

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ603isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES •Superlowon-stateresistance: RDS(on)1=48mΩMAX.(VGS=−10V,ID=−13A) RDS(on)2=75mΩMAX.(VGS=−4.0V,ID=−13A) •

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

2SJ603

MOSFieldEffectTransistor

Features ●Lowon-resistance RDS(on)1=48mMAX.(VGS=-10V,ID=-13A) RDS(on)2=75mMAX.(VGS=-4.0V,ID=-13A) ●LowCiss:Ciss=1900pFTYP. ●Built-ingateprotectiondiode

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

2SJ603

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ603isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES •Superlowon-stateresistance: RDS(on)1=48mΩMAX.(VGS=−10V,ID=−13A) RDS(on)2=75mΩMAX.(VGS=−4.0V,ID=−13A) •Lowinputcapacitance: Ciss=1

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

2SJ603-S

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ603isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES •Superlowon-stateresistance: RDS(on)1=48mΩMAX.(VGS=−10V,ID=−13A) RDS(on)2=75mΩMAX.(VGS=−4.0V,ID=−13A) •

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

2SJ603-S

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ603isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES •Superlowon-stateresistance: RDS(on)1=48mΩMAX.(VGS=−10V,ID=−13A) RDS(on)2=75mΩMAX.(VGS=−4.0V,ID=−13A) •Lowinputcapacitance: Ciss=1

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

详细参数

  • 型号:

    2SJ603-Z

  • 制造商:

    NEC

  • 制造商全称:

    NEC

  • 功能描述:

    MOS FIELD EFFECT TRANSISTOR

供应商型号品牌批号封装库存备注价格
NEC
24+
TO-263
503134
免费送样原盒原包现货一手渠道联系
询价
NEC
23+
TO-263
35890
询价
NEC
24+
4326
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
DIOS
23+
SOT-23
69820
终端可以免费供样,支持BOM配单!
询价
NEC
24+
6540
原装现货/欢迎来电咨询
询价
RENESAS/瑞萨
2022+
TO-263
32500
原厂代理 终端免费提供样品
询价
RENESAS/瑞萨
2022+
TO-263
30000
进口原装现货供应,原装 假一罚十
询价
RENESAS/瑞萨
20+
TO-263
32500
现货很近!原厂很远!只做原装
询价
R
25+
TOTO-220
35400
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
NK/南科功率
2025+
TO-263
986966
国产
询价
更多2SJ603-Z供应商 更新时间2025-5-23 17:06:00