SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SJ599 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance: RDS(on)1= 75 mΩMAX. (VGS= –10 V, ID= –10 A) RDS(on)2= 111 mΩMAX. (VGS= –4.0 V, ID= –10 A) • Low input capacitance: Ciss= 13

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SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ599 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance: RDS(on)1 = 75 mΩ MAX. (VGS = –10 V, ID = –10 A) RDS(on)2 = 111 mΩ MAX. (VGS = –4.0 V, ID = –10 A) • Low i

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文件：978.97 Kbytes 页数：2 Pages

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Pch Single Power Mosfet -60V -20A 75Mohm Mp-3Z/To-252

The 2SJ599-Z is a Pch Single Power Mosfet -60V -20A 75Mohm Mp-3Z/To-252. • Low on-state resistance: RDS(on)1 = 75 mΩ MAX. (VGS = –10 V, ID = –10 A) RDS(on)2 = 111 mΩ MAX. (VGS = –4.0 V, ID = –10 A)\n• Low input capacitance: Ciss = 1300 pF TYP. (VDS = –10 V, VGS = 0 V)\n• Built-in gate protection diode\n• TO-251/TO-252 package\n文档文档标题类型日期Attention of Handling Semiconducto;

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The 2SJ599-ZK is a Pch Single Power Mosfet -60V -20A 75Mohm Mp-3Zk/To-252. • Low on-state resistance:RDS(on)1 = 75 mΩ MAX. (VGS = –10 V, ID = –10 A)RDS(on)2 = 111 mΩ MAX. (VGS = –4.0 V, ID = –10 A)\n• Built-in gate protection diode\n• TO-251/TO-252 package\n;

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