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2SJ599-ZK

Pch Single Power Mosfet -60V -20A 75Mohm Mp-3Zk/To-252

The 2SJ599-ZK is a Pch Single Power Mosfet -60V -20A 75Mohm Mp-3Zk/To-252. • Low on-state resistance:RDS(on)1 = 75 mΩ MAX. (VGS = –10 V, ID = –10 A)RDS(on)2 = 111 mΩ MAX. (VGS = –4.0 V, ID = –10 A)\n• Built-in gate protection diode\n• TO-251/TO-252 package\n;

Renesas

瑞萨

2SJ599

MOS Field Effect Transistor

MOS Field Effect Transistor Features Low on-resistance RDS(on)1=75mΩ MAX. (VGS=-10 V, ID=-10A) RDS(on)2= 110mΩ MAX. (VGS=-4.0V,ID=-10 A) Low Ciss:Ciss = 1300 pF TYP. Built-in gate protection diode

文件:50.9 Kbytes 页数:2 Pages

KEXIN

科信电子

2SJ599

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SJ599 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance: RDS(on)1= 75 mΩMAX. (VGS= –10 V, ID= –10 A) RDS(on)2= 111 mΩMAX. (VGS= –4.0 V, ID= –10 A) • Low input capacitance: Ciss= 13

文件:40.93 Kbytes 页数:4 Pages

NEC

瑞萨

2SJ599

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ599 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance: RDS(on)1 = 75 mΩ MAX. (VGS = –10 V, ID = –10 A) RDS(on)2 = 111 mΩ MAX. (VGS = –4.0 V, ID = –10 A) • Low i

文件:243.94 Kbytes 页数:10 Pages

RENESAS

瑞萨

供应商型号品牌批号封装库存备注价格
RENESAS/瑞萨
18+
TO-252
41200
原装正品,现货特价
询价
RENESAS/瑞萨
20+
TO-252
38900
原装优势主营型号-可开原型号增税票
询价
RENESAS/瑞萨
23+
TO-252
50000
全新原装正品现货,支持订货
询价
RENESAS/瑞萨
2022+
TO-252
32500
原厂代理 终端免费提供样品
询价
RENESAS/瑞萨
24+
NA/
12000
优势代理渠道,原装正品,可全系列订货开增值税票
询价
RENESAS/瑞萨
20+
TO-252
32500
现货很近!原厂很远!只做原装
询价
R
25+
TO-252
35400
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
RENESAS/瑞萨
24+
TO-252
60000
询价
NK/南科功率
2025+
TO-252
986966
国产
询价
RENESAS/瑞萨
2511
TO-252
360000
电子元器件采购降本30%!原厂直采,砍掉中间差价
询价
更多2SJ599-ZK供应商 更新时间2022-6-12 10:12:00