首页 >2SJ599>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

2SJ599

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SJ599 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance: RDS(on)1= 75 mΩMAX. (VGS= –10 V, ID= –10 A) RDS(on)2= 111 mΩMAX. (VGS= –4.0 V, ID= –10 A) • Low input capacitance: Ciss= 13

文件:40.93 Kbytes 页数:4 Pages

NEC

瑞萨

2SJ599

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ599 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance: RDS(on)1 = 75 mΩ MAX. (VGS = –10 V, ID = –10 A) RDS(on)2 = 111 mΩ MAX. (VGS = –4.0 V, ID = –10 A) • Low i

文件:243.94 Kbytes 页数:10 Pages

RENESAS

瑞萨

2SJ599

MOS Field Effect Transistor

MOS Field Effect Transistor Features Low on-resistance RDS(on)1=75mΩ MAX. (VGS=-10 V, ID=-10A) RDS(on)2= 110mΩ MAX. (VGS=-4.0V,ID=-10 A) Low Ciss:Ciss = 1300 pF TYP. Built-in gate protection diode

文件:50.9 Kbytes 页数:2 Pages

KEXIN

科信电子

2SJ599

Pch Single Power Mosfet -60V -20A 75Mohm Mp-3/To-251

The 2SJ599 is a Pch Single Power Mosfet -60V -20A 75Mohm Mp-3/To-251. • Low on-state resistance: RDS(on)1 = 75 mΩ MAX. (VGS = –10 V, ID = –10 A) RDS(on)2 = 111 mΩ MAX. (VGS = –4.0 V, ID = –10 A)\n• Low input capacitance: Ciss = 1300 pF TYP. (VDS = –10 V, VGS = 0 V)\n• Built-in gate protection diode\n• TO-251/TO-252 package\n文档文档标题类型日期Attention of Handling Semiconducto;

Renesas

瑞萨

2SJ599-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ599 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance: RDS(on)1 = 75 mΩ MAX. (VGS = –10 V, ID = –10 A) RDS(on)2 = 111 mΩ MAX. (VGS = –4.0 V, ID = –10 A) • Low i

文件:243.94 Kbytes 页数:10 Pages

RENESAS

瑞萨

2SJ599-Z

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SJ599 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance: RDS(on)1= 75 mΩMAX. (VGS= –10 V, ID= –10 A) RDS(on)2= 111 mΩMAX. (VGS= –4.0 V, ID= –10 A) • Low input capacitance: Ciss= 13

文件:40.93 Kbytes 页数:4 Pages

NEC

瑞萨

2SJ599_15

SWITCHING P-CHANNEL POWER MOS FET

文件:244.55 Kbytes 页数:10 Pages

RENESAS

瑞萨

2SJ599-Z

P-Channel MOSFET

文件:978.97 Kbytes 页数:2 Pages

KEXIN

科信电子

2SJ599-Z_15

P-Channel MOSFET

文件:978.97 Kbytes 页数:2 Pages

KEXIN

科信电子

2SJ599-Z

Pch Single Power Mosfet -60V -20A 75Mohm Mp-3Z/To-252

The 2SJ599-Z is a Pch Single Power Mosfet -60V -20A 75Mohm Mp-3Z/To-252. • Low on-state resistance: RDS(on)1 = 75 mΩ MAX. (VGS = –10 V, ID = –10 A) RDS(on)2 = 111 mΩ MAX. (VGS = –4.0 V, ID = –10 A)\n• Low input capacitance: Ciss = 1300 pF TYP. (VDS = –10 V, VGS = 0 V)\n• Built-in gate protection diode\n• TO-251/TO-252 package\n文档文档标题类型日期Attention of Handling Semiconducto;

Renesas

瑞萨

详细参数

  • 型号:

    2SJ599

  • 制造商:

    Renesas Electronics

  • 功能描述:

    Pch -60V -12A 130m@10V TO251

  • 功能描述:

    Pch -60V -12A 130m@10V TO251 Bulk

  • 功能描述:

    Pch -60V -12A 130m@10V TO251 Cut Tape

  • 制造商:

    Renesas

  • 功能描述:

    Trans MOSFET P-CH 60V 20A 3-Pin(3+Tab) TO-251

供应商型号品牌批号封装库存备注价格
VB
2024
TO-251
13500
16余年资质 绝对原盒原盘代理渠道 更多数量
询价
HITACHI
24+
60000
询价
NEC
24+
SOT-251
8858
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
NEC
24+
SOT-251
6540
原装现货/欢迎来电咨询
询价
RENESAS/瑞萨
25+
TO-252-2
1499
就找我吧!--邀您体验愉快问购元件!
询价
VBSEMI/台湾微碧
23+
TO251
50000
全新原装正品现货,支持订货
询价
RENESAS/瑞萨
2022+
TO-251
50000
原厂代理 终端免费提供样品
询价
RENESAS/瑞萨
24+
NA/
1499
优势代理渠道,原装正品,可全系列订货开增值税票
询价
R
25+
TO-251
35400
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
RENESAS/瑞萨
24+
TO-252-2
60000
全新原装现货
询价
更多2SJ599供应商 更新时间2025-10-9 17:06:00