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2SJ600

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The2SJ600isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES •Lowon-stateresistance: RDS(on)1=50mΩMAX.(VGS=–10V,ID=–13A) RDS(on)2=79mΩMAX.(VGS=–4.0V,ID=–13A) •LowCiss:Ciss=1900pFTYP. •Built-

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

2SJ600

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ600isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES •Lowon-stateresistance: RDS(on)1=50mΩMAX.(VGS=–10V,ID=–13A) RDS(on)2=79mΩMAX.(VGS=–4.0V,ID=–13A) •Lowin

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

2SJ600

MOS Field Effect Transistor

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

2SJ600

P-Channel 60 V (D-S) MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

2SJ600-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ600isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES •Lowon-stateresistance: RDS(on)1=50mΩMAX.(VGS=–10V,ID=–13A) RDS(on)2=79mΩMAX.(VGS=–4.0V,ID=–13A) •Lowin

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

2SJ600-Z

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The2SJ600isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES •Lowon-stateresistance: RDS(on)1=50mΩMAX.(VGS=–10V,ID=–13A) RDS(on)2=79mΩMAX.(VGS=–4.0V,ID=–13A) •LowCiss:Ciss=1900pFTYP. •Built-

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

2SJ600_15

SWITCHING P-CHANNEL POWER MOS FET

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

2SJ600-Z

P-Channel MOSFET

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

2SJ600-Z_15

P-Channel MOSFET

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

2SJ600-Z-E1-AZ

P-Channel 60 V (D-S) MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

2SJ600-Z-E1-AZ

包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 类别:分立半导体产品 晶体管 - FET,MOSFET - 单个 描述:TRANSISTOR

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

2SJ600-Z

SWITCHINGP-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION The2SJ600isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES •Lowon-stateresistance: RDS(on)1=50mΩMAX.(VGS=–10V,ID=–13A) RDS(on)2=79mΩMAX.(VGS=–4.0V,ID=–13A) •LowCiss:Ciss=1900pFTYP. •Built-

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

2SJ600-Z

P-ChannelMOSFET

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

2SJ600-Z

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ600isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES •Lowon-stateresistance: RDS(on)1=50mΩMAX.(VGS=–10V,ID=–13A) RDS(on)2=79mΩMAX.(VGS=–4.0V,ID=–13A) •Lowin

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

详细参数

  • 型号:

    2SJ600

  • 制造商:

    KEXIN

  • 制造商全称:

    Guangdong Kexin Industrial Co.,Ltd

  • 功能描述:

    MOS Field Effect Transistor

供应商型号品牌批号封装库存备注价格
NEC
2017+
TO-252
44558
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增
询价
NEC
12+
TO-251
15000
全新原装,绝对正品,公司现货供应。
询价
NEC
03+
TO-251
2000
询价
NEC
2339+
4231
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
KEXIN
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
23+
N/A
90150
正品授权货源可靠
询价
NEC
1746+
8862
深圳公司现货!特价支持工厂客户!提供样品!
询价
VB
2019
TO-252
55000
绝对原装正品假一罚十!
询价
NEC
23+
TO-251
33500
全新原装真实库存含13点增值税票!
询价
RENESAS
2020+
TO-251
36750
公司代理品牌,原装现货超低价清仓!
询价
更多2SJ600供应商 更新时间2024-4-30 9:07:00