2SJ600-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ600isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES •Lowon-stateresistance: RDS(on)1=50mΩMAX.(VGS=–10V,ID=–13A) RDS(on)2=79mΩMAX.(VGS=–4.0V,ID=–13A) •Lowin

2SJ600-Z

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The2SJ600isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES •Lowon-stateresistance: RDS(on)1=50mΩMAX.(VGS=–10V,ID=–13A) RDS(on)2=79mΩMAX.(VGS=–4.0V,ID=–13A) •LowCiss:Ciss=1900pFTYP. •Built-

2SJ600-Z

P-Channel MOSFET

2SJ600-Z_15

P-Channel MOSFET

2SJ600-Z-E1-AZ

P-Channel 60 V (D-S) MOSFET

2SJ600-Z-E1-AZ

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：TRANSISTOR

Renesas Electronics America Inc

2SJ600

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ600isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES •Lowon-stateresistance: RDS(on)1=50mΩMAX.(VGS=–10V,ID=–13A) RDS(on)2=79mΩMAX.(VGS=–4.0V,ID=–13A) •Lowin

2SJ600

P-Channel60V(D-S)MOSFET

2SJ600

MOSFieldEffectTransistor

2SJ600

SWITCHINGP-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION The2SJ600isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES •Lowon-stateresistance: RDS(on)1=50mΩMAX.(VGS=–10V,ID=–13A) RDS(on)2=79mΩMAX.(VGS=–4.0V,ID=–13A) •LowCiss:Ciss=1900pFTYP. •Built-