Power MOSFETs

Renesas

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P-Channel 60 V (D-S) MOSFET

文件：993.54 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

MOS Field Effect Transistor

文件：51.19 Kbytes 页数：2 Pages

KEXIN

科信电子

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SJ600 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance: RDS(on)1 = 50 mΩ MAX. (VGS = –10 V, ID = –13 A) RDS(on)2 = 79 mΩ MAX. (VGS = –4.0 V, ID = –13 A) • Low Ciss: Ciss = 1900 pF TYP. • Built-

文件：40.96 Kbytes 页数：4 Pages

NEC

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