SWITCHING P-CHANNEL POWER MOS FET

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ598 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance: RDS(on)1= 130 mΩMAX. (VGS= –10 V, ID= –6 A) RDS(on)2= 190 mΩMAX. (VGS= –4.0 V, ID= –6 A) •Low

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MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ598 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance: RDS(on)1 = 130 mΩ MAX. (VGS = –10 V, ID = –6 A) RDS(on)2 = 190 mΩ MAX. (VGS = –4.0 V, ID = –6 A) • Low Ci

文件：243.33 Kbytes 页数：10 Pages

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Pch Single Power Mosfet -60V -12A 130Mohm Mp-3/To-251

The 2SJ598 is a Pch Single Power Mosfet -60V -12A 130Mohm Mp-3/To-251. • Low on-state resistance: RDS(on)1 = 130 mΩ MAX. (VGS = –10 V, ID = –6 A) RDS(on)2 = 190 mΩ MAX. (VGS = –4.0 V, ID = –6 A)\n• Low Ciss: Ciss = 720 pF TYP.\n• Built-in gate protection diode\n• TO-251/TO-252 package\n文档文档标题类型日期Attention of Handling Semiconductor DevicesPDF648 KB日本語应用文档2021年4月16日2SJ59;

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SWITCHING P-CHANNEL POWER MOS FET

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ598 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance: RDS(on)1= 130 mΩMAX. (VGS= –10 V, ID= –6 A) RDS(on)2= 190 mΩMAX. (VGS= –4.0 V, ID= –6 A) •Low

文件：154.49 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ598 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance: RDS(on)1 = 130 mΩ MAX. (VGS = –10 V, ID = –6 A) RDS(on)2 = 190 mΩ MAX. (VGS = –4.0 V, ID = –6 A) • Low Ci

文件：243.33 Kbytes 页数：10 Pages

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FEATURES ·Drain Current -ID= -12A@ TC=25℃ ·Drain Source Voltage -VDSS= -60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 130mΩ(Max)@VGS= -10V DESCRIPTION ·Solenoid, motor and lamp driver

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