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2SJ560

Ultrahigh-Speed Switching Applications

Ultrahigh-SpeedSwitchingApplications Features •LowON-resistance. •Ultrahigh-speedswitching. •2.5Vdrive.

SANYOSanyo

三洋三洋电机株式会社

SANYO

2SJ561

Ultrahigh-Speed Switching Applications

Ultrahigh-SpeedSwitchingApplications Features •LowON-resistance. •Ultrahigh-speedswitching. •4Vdrive.

SANYOSanyo

三洋三洋电机株式会社

SANYO

2SJ562

Ultrahigh-Speed Switching Applications

Ultrahigh-SpeedSwitchingApplications Features ·LowON-resistance. ·Ultrahigh-speedswitching. ·2.5Vdrive.

SANYOSanyo

三洋三洋电机株式会社

SANYO

2SJ563

Ultrahigh-Speed Switching Applications

Ultrahigh-SpeedSwitchingApplications Features •LowON-resistance. •Ultrahigh-speedswitching. •4Vdrive.

SANYOSanyo

三洋三洋电机株式会社

SANYO

2SJ567

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

2SJ567

Switching Applications

SwitchingApplications ChopperRegulator,DC/DCConverterandMotorDriveApplications •Lowdrain-sourceON-resistance:RDS(ON)=1.6Ω(typ.) •Highforwardtransferadmittance:|Yfs|=2.0S(typ.) •Lowleakagecurrent:IDSS=−100μA(max)(VDS=−200V) •Enhancementmodel:Vth=−1.5

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

2SJ567(TE16L1,NQ)

TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (-MOSV)

SwitchingApplications ChopperRegulator,DC/DCConverterandMotorDriveApplications •Lowdrain-sourceON-resistance:RDS(ON)=1.6Ω(typ.) •Highforwardtransferadmittance:|Yfs|=2.0S(typ.) •Lowleakagecurrent:IDSS=−100μA(max)(VDS=−200V) •Enhancementmodel:Vth=−1.5

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

2SJ569LS

Ultrahigh-Speed Switching Applications

Ultrahigh-SpeedSwitchingApplications Features •LowON-resistance. •Ultrahigh-speedswitching.

SANYOSanyo

三洋三洋电机株式会社

SANYO

2SJ562

P-Channel 30-V (D-S) MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

2SJ567

Silicon P-Channel MOS Type Switching Applications

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

2SJ567

TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (MOSV)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

2SJ567_06

Silicon P-Channel MOS Type Switching Applications

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

2SJ567_09

TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (MOSV)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

详细参数

  • 型号:

    2SJ56

  • 制造商:

    SANYO

  • 制造商全称:

    Sanyo Semicon Device

  • 功能描述:

    Ultrahigh-Speed Switching Applications

供应商 型号 品牌 批号 封装 库存 备注 价格
NEC
2022+
SOT-89
18000
询价
NEC
2019+
SOT-89
78550
原厂渠道 可含税出货
询价
RENESAS/瑞萨
20+
SOT-89
120000
原装正品 可含税交易
询价
SANYO
360000
原厂原装
1305
询价
NEC
23+
SOT-89
31000
全新原装现货
询价
SAY
05+
SOT-89
20000
询价
O
2022+
SOT-89
5000
只做原装公司现货
询价
SOT-89
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
RENESAS
23+
SOT-89
57000
原装正品现货
询价
23+
N/A
85400
正品授权货源可靠
询价
更多2SJ56供应商 更新时间2024-3-28 14:00:00