2SJ560

Ultrahigh-Speed Switching Applications

Ultrahigh-SpeedSwitchingApplications Features •LowON-resistance. •Ultrahigh-speedswitching. •2.5Vdrive.

2SJ561

Ultrahigh-Speed Switching Applications

Ultrahigh-SpeedSwitchingApplications Features •LowON-resistance. •Ultrahigh-speedswitching. •4Vdrive.

2SJ562

Ultrahigh-Speed Switching Applications

Ultrahigh-SpeedSwitchingApplications Features ·LowON-resistance. ·Ultrahigh-speedswitching. ·2.5Vdrive.

2SJ563

Ultrahigh-Speed Switching Applications

Ultrahigh-SpeedSwitchingApplications Features •LowON-resistance. •Ultrahigh-speedswitching. •4Vdrive.

2SJ567

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

2SJ567

Switching Applications

SwitchingApplications ChopperRegulator,DC/DCConverterandMotorDriveApplications •Lowdrain-sourceON-resistance:RDS(ON)=1.6Ω(typ.) •Highforwardtransferadmittance:|Yfs|=2.0S(typ.) •Lowleakagecurrent:IDSS=−100μA(max)(VDS=−200V) •Enhancementmodel:Vth=−1.5

2SJ567(TE16L1,NQ)

TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (-MOSV)

SwitchingApplications ChopperRegulator,DC/DCConverterandMotorDriveApplications •Lowdrain-sourceON-resistance:RDS(ON)=1.6Ω(typ.) •Highforwardtransferadmittance:|Yfs|=2.0S(typ.) •Lowleakagecurrent:IDSS=−100μA(max)(VDS=−200V) •Enhancementmodel:Vth=−1.5

2SJ569LS

Ultrahigh-Speed Switching Applications

Ultrahigh-SpeedSwitchingApplications Features •LowON-resistance. •Ultrahigh-speedswitching.

2SJ562

P-Channel 30-V (D-S) MOSFET

2SJ567

Silicon P-Channel MOS Type Switching Applications