2SJ567

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

2SJ567

Switching Applications

SwitchingApplications ChopperRegulator,DC/DCConverterandMotorDriveApplications •Lowdrain-sourceON-resistance:RDS(ON)=1.6Ω(typ.) •Highforwardtransferadmittance:|Yfs|=2.0S(typ.) •Lowleakagecurrent:IDSS=−100μA(max)(VDS=−200V) •Enhancementmodel:Vth=−1.5

2SJ567

Power MOSFET (P-ch single); Drain current ID -2.5 A \nPower Dissipation PD 20 W \nDrain-Source voltage VDSS -200 V \n;

Polarity：P-ch\nGeneration：π-MOSⅤ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本\n

2SJ567

Silicon P-Channel MOS Type Switching Applications

2SJ567

TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (MOSV)

2SJ567(TE16L1,NQ)

TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (-MOSV)

SwitchingApplications ChopperRegulator,DC/DCConverterandMotorDriveApplications •Lowdrain-sourceON-resistance:RDS(ON)=1.6Ω(typ.) •Highforwardtransferadmittance:|Yfs|=2.0S(typ.) •Lowleakagecurrent:IDSS=−100μA(max)(VDS=−200V) •Enhancementmodel:Vth=−1.5

2SJ567_06

Silicon P-Channel MOS Type Switching Applications

2SJ567_09

TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (MOSV)