Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

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Switching Applications

Switching Applications Chopper Regulator, DC/DC Converter and Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 1.6 Ω (typ.) • High forward transfer admittance: |Yfs| = 2.0 S (typ.) • Low leakage current: IDSS = −100 μA (max) (VDS = −200 V) • Enhancement model: Vth = −1.5

文件：234.93 Kbytes 页数：6 Pages

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Silicon P-Channel MOS Type Switching Applications

文件：195.76 Kbytes 页数：6 Pages

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TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (MOSV)

文件：184.21 Kbytes 页数：6 Pages

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Power MOSFET (P-ch single)

Polarity：P-ch\nGeneration：π-MOSⅤ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current ID -2.5 A \nPower Dissipation PD 20 W \nDrain-Source voltage VDSS -200 V ;

Toshiba

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TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (-MOSV)

Switching Applications Chopper Regulator, DC/DC Converter and Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 1.6 Ω (typ.) • High forward transfer admittance: |Yfs| = 2.0 S (typ.) • Low leakage current: IDSS = −100 μA (max) (VDS = −200 V) • Enhancement model: Vth = −1.5

文件：182.65 Kbytes 页数：6 Pages

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Silicon P-Channel MOS Type Switching Applications

文件：195.76 Kbytes 页数：6 Pages

TOSHIBA

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TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (MOSV)

文件：184.21 Kbytes 页数：6 Pages

TOSHIBA

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