2SJ552STL-E说明书PDF资料库存现货瑞萨-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
2SJ552STL-E	文件：96 Kbytes Page：9 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.042 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching. 文件：96 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
2SJ552	文件：56.44 Kbytes Page：9 Pages	Silicon P Channel MOS FET High Speed Power Switching Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. 文件：56.44 Kbytes 页数：9 Pages	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ552	文件：96 Kbytes Page：9 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.042 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching. 文件：96 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
2SJ552(L)_15	文件：115.37 Kbytes Page：11 Pages	Silicon P Channel MOS FET 文件：115.37 Kbytes 页数：11 Pages	RENESAS 瑞萨	RENESAS

更多2SJ552STL-E供应商更新时间2025-10-6 11:10:00