Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.11 Ω typ. • Low drive current • 4 V gete drive devices • High speed switching

文件：52.17 Kbytes 页数：9 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.11 Ω typ. • Low drive current • 4 V gate drive devices • High speed switching

文件：90.32 Kbytes 页数：8 Pages

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isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -12A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.15Ω(Max)@VGS= -10V APPLICATIONS · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：296.32 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon P Channel MOS FET

Description\nHigh speed power switching Features• Low on-resistance\n  RDS (on) = 0.11 Ω typ.\n• Low drive current\n• 4 V gate drive devices\n• High speed switching

Renesas

瑞萨

Silicon P Channel MOS FET High Speed Power Switching

HITACHI

日立

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.11 Ω typ. • Low drive current • 4 V gate drive devices • High speed switching

文件：90.32 Kbytes 页数：8 Pages

RENESAS

瑞萨