Power switching MOSFET

HITACHI

日立

Silicon P-Channel MOS FET

HITACHI

日立

Silicon P Channel MOS FET

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RENESAS

瑞萨

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on)= 0.042 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching.

文件：96 Kbytes 页数：9 Pages

RENESAS

瑞萨

Silicon P Channel MOS FET High Speed Power Switching

Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

文件：56.44 Kbytes 页数：9 Pages

HITACHIHitachi Semiconductor

日立日立公司

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID=-20A@ TC=25℃ · Drain Source Voltage -VDSS=-60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.055Ω(MAX)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

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